Disorder–Order Transition in Ga ₂ O ₃ and Its Solid Solution with In ₂ O ₃ upon Thermal Annealing

The local ordering in amorphous Ga2O3 and (In x Ga1−x )2O3 thin films on Si(111) its change crystallization upon annealing are investigated. Synchrotron-based extended X-ray absorption fine structure data, as probed across the Ga K-edge conjunction with a numerical implementation of scattering process including multiple events, provide detailed insights into bonding character cations. Bond lengths coordination numbers indicate preferential formation GaO4 tetrahedrons binary ternary solid solution at absence long-range ordering. Upon there is no tendency toward for alloy, while film turns monoclinic β-Ga2O3 crystallites both tetra- octahedral coordination.